1/8 may 2003 STW220NF75 n-channel 75v - 0.004 w - 120a to-247 stripfet? ii power mosfet n typical r ds (on) = 0.004 w n standard threshold drive n 100% avalanche tested description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high switching speed n automotive 42v battery system n or-ing function type v dss r ds(on) i d STW220NF75 75v <0.0044 w 120a(** ) 1 2 3 to-247 absolute maximum ratings ) pulse width limited by safe operating area. (**) current limited by package (1) i sd 120a, di/dt 100a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 60 a, v dd = 30v symbol parameter value unit v ds drain-source voltage (v gs = 0) 75 v v dgr drain-gate voltage (r gs = 20 k w ) 75 v v gs gate- source voltage 20 v i d (** ) drain current (continuous) at t c = 25c 120 a i d (** ) drain current (continuous) at t c = 100c 120 a i dm ( ) drain current (pulsed) 480 a p tot total dissipation at t c = 25c 500 w derating factor 3.33 w/c dv/dt (1) peak diode recovery voltage slope 10 v/ns e as (2) single pulse avalanche energy 2500 mj t stg storage temperature -55 to 175 c t j operating junction temperature internal schematic diagram
STW220NF75 2/8 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1 ) dynamic rthj-case rthj-amb t j thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec) max max typ 0.30 50 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 60 a 0.004 0.0044 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 25 v i d = 60 a 200 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 12500 2150 600 pf pf pf
3/8 STW220NF75 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 38 v i d = 60 a r g = 4.7 w v gs = 10 v (resistive load, figure 3) 50 215 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =38v i d =120a v gs =10v 350 60 135 430 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 38 v i d = 60 a r g = 4.7 w, v gs = 10 v (resistive load, figure 3) 250 130 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 120 480 a a v sd (*) forward on voltage i sd = 120 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a di/dt = 100a/s v dd = 32 v t j = 150c (see test circuit, figure 5) 140 770 11 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STW220NF75 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 STW220NF75 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature . .
STW220NF75 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/8 STW220NF75 dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data
STW220NF75 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2003 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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